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Comprehensive study on molecular beam epitaxy-grown InAs sub-monolayer quantum dots with different capping combinations
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10.1116/1.4805018
/content/avs/journal/jvstb/31/3/10.1116/1.4805018
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4805018
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Basic design of sub-monolayer quantum dots samples under investigation is shown.

Image of FIG. 2.
FIG. 2.

(Color online) PL spectra of different samples at 8 K temperature: (a) increasing amount of InAs deposition thicknesses from 0.3 ML to 0.8 ML causes a red shift of emission wavelength from 837 to 874 nm. (b) Increasing amount of GaAs deposition thicknesses from 1.5 to 2.5 nm shows a red shift of emission wavelength from 844 to 853 nm.

Image of FIG. 3.
FIG. 3.

(a) (Color online) PL spectra of samples A, B, and C at 300 K are presented. The ground state emission peaks are situated at 898, 917, and 871 nm for samples A, B, and C, respectively. (b) Temperature-dependent PL experiment produces conventional Arrhenius plots of samples A, B, and C. Thermal activation energies for A, B, and C are calculated as 49, 112, and 109 meV, respectively.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Variation of dark current of A, B, and D devices is presented as function of applied bias voltage at 77 K temperature. (b) Activation energies for A, B, and C are calculated as 49, 112, and 109 meV, respectively, by using temperature-dependent dark current measurement as function of applied bias voltage.

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/content/avs/journal/jvstb/31/3/10.1116/1.4805018
2013-05-16
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comprehensive study on molecular beam epitaxy-grown InAs sub-monolayer quantum dots with different capping combinations
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4805018
10.1116/1.4805018
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