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Effect of chemical bonding states in TaO x base layers on rectifying bipolar resistive switching characteristics
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10.1116/1.4806766
/content/avs/journal/jvstb/31/3/10.1116/1.4806766
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4806766
/content/avs/journal/jvstb/31/3/10.1116/1.4806766
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/content/avs/journal/jvstb/31/3/10.1116/1.4806766
2013-05-15
2014-10-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of chemical bonding states in TaOx base layers on rectifying bipolar resistive switching characteristics
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/3/10.1116/1.4806766
10.1116/1.4806766
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