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Tuning the electronic states of individual Co acceptors in GaAs
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10.1116/1.4803841
/content/avs/journal/jvstb/31/4/10.1116/1.4803841
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/4/10.1116/1.4803841
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Arsenic vacancy, imaged at −1.3 V.

Image of FIG. 2.
FIG. 2.

Formation and imaging of surface-layer Co acceptor. Scale bars are 1 nm. (a) A Co adatom imaged at (−1.3 V). (b) By ramping the voltage up to >1.7 V, the Co has been inserted into the surface, displacing a Ga atom. (c) and (d) The Co acceptor imaged at [(c) −1.3 V and (d) +1.55 V]. Adapted from Ref. .

Image of FIG. 3.
FIG. 3.

(Color online) (Inset) STM image showing tip locations for tunneling spectroscopy off-Co (a) and on-Co (b). Scale bar is 1 nm. Off-atom, one peak (α) is observed, while on-atom, two (β,γ) are observed.

Image of FIG. 4.
FIG. 4.

(Color online) (a) STM images of Co acceptor (black arrow) with (white arrow) at three different distances . (b) dI/dV spectroscopy showing shifts of α, β, and γ peaks for three distances. (c) Plot of peak shifts vs , with Coulomb 1/ fits (solid lines).

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/content/avs/journal/jvstb/31/4/10.1116/1.4803841
2013-05-07
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tuning the electronic states of individual Co acceptors in GaAs
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/4/10.1116/1.4803841
10.1116/1.4803841
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