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Atom probe tomography of AlInN/GaN HEMT structures
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10.1116/1.4807321
/content/avs/journal/jvstb/31/4/10.1116/1.4807321
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/4/10.1116/1.4807321

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic of the HEMT structures studied under APT. (b) TEM image of a typical AlInN/GaN specimen obtained using FIB, showing a diameter of 100 nm and a shank angle of 8°. (c) APT reconstruction of AlInN/GaN HEMT structure.

Image of FIG. 2.
FIG. 2.

(Color online) APT mass-to-charge spectra comparison of voltage mode (top, black) and laser mode (bottom, red). The inset shows a closer look of the spectra in the region of Ga (peaks at m/c 34.5 and 35.5).

Image of FIG. 3.
FIG. 3.

(Color online) Mass-to-charge spectrum near m/c 14 showing the theoretically possible positions of peaks associated with nitrogen. The absence of a peak at 14.5 suggests that the peaks experimentally observed correspond to N and there is no measurable contribution from N .

Image of FIG. 4.
FIG. 4.

(Color online) Gallium and nitrogen concentrations determined from APT as a function of laser pulse energy.

Image of FIG. 5.
FIG. 5.

Typical mass-to-charge spectra for (a) AlInN/GaN and (b) AlGaN/GaN HEMT structures.

Image of FIG. 6.
FIG. 6.

(Color online) Isosurface reconstruction for AlGaN/GaN (a) before and (b) after Co irradiation exposure at 6 Mrad(Si). The top blue isosurfaces correspond to Al (at ∼9%) while the bottom gold isosurfaces correspond to Ga (∼91%). The Al surface RMS roughness increased from 1.5 to 1.8 nm, while the Ga roughness increased from 0.94 to 1.5 nm after irradiation.

Image of FIG. 7.
FIG. 7.

(Color online) Isosurface reconstruction for AlInN/GaN (a) before and (b) after Co irradiation exposure at 6 Mrad(Si). The top blue isosurfaces correspond to Al (at ∼31%), the center violet isosurfaces correspond to In (∼2%), and the bottom gold isosurfaces correspond to Ga (∼67%). The Al surface RMS roughness increased from 0.23 to 1.2 nm, the In roughness increased from 1.2 to 1.4 nm, and the Ga roughness increased from 0.23 to 0.80 nm.

Image of FIG. 8.
FIG. 8.

(Color online) Proximity histogram, before (solid blue line) and after irradiation (dashed red line), for Al and Ga centered at the interface shown in Fig. 7 .

Tables

Generic image for table
TABLE I.

Room temperature Hall measurements for AlInN/GaN and AlGaN/GaN structures before and after Co irradiation.

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/content/avs/journal/jvstb/31/4/10.1116/1.4807321
2013-05-22
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atom probe tomography of AlInN/GaN HEMT structures
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/4/10.1116/1.4807321
10.1116/1.4807321
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