HR TEM images of HA/SiO2 tunnel barrier stack of (a) Hf-rich HA/SiO2, (b) Al-rich HA/SiO2, (c) a single SiO2 layer.
(Color online) Schematics band diagram of Al-rich HA/SiO2 tunnel barrier (red line) and SiO2 single barrier (black dash) at (a) flat band condition and (b) high electric bias conditions.
(Color online) GIXRD spectra of HA films annealed by RTP at temperatures between 750 and 950 °C for 30 s; (a) Hf-rich HA film, (b) Al-rich HA film.
(Color online) Tunneling current characteristics of band-engineered HA/SiO2 tunnel barriers.
(Color online) Programming and erasing characteristics of BE-MAHOS memory devices at various operation conditions; (a) Hf-rich HA/SiO2, (b) Al-rich HA/SiO2, and (c) a single SiO2.
(Color online) Retention characteristics of BE-MAHOS MAHOS memory devices.
(Color online) Endurance characteristics of BE-MAHOS and MAHOS memory devices.
Band-gap, band-offset, and dielectric constant values for the HA films.
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