(Color online) (a) Molten KOH etch pattern of a GaAs epilayer grown directly on a Ge substrate without an Al0.3Ga0.7As interlayer. The AFM images of GaAs epilayers in a 10 μm × 10 μm scan area with Al0.3Ga0.7As interlayer thicknesses of (b) 0 nm, (c) 15 nm, (d) 23 nm, and (e) 30 nm.
(Color online) Mosaic spread (blue stars) and FWHMs (green squares) of asymmetric (224) RSMs of the GaAs epilayers as a function of the Al0.3Ga0.7As interlayer thickness.
(Color online) Raman spectra of GaAs epilayers on a Ge substrate with different Al0.3Ga0.7As interlayer thicknesses of 0, 15, 23, and 30 nm. The inset figure shows ITO/LO vs the Al0.3Ga0.7As interlayer thickness.
(Color online) Room temperature PL of GaAs/ Al0.3Ga0.7As/Ge structures with different Al0.3Ga0.7As thicknesses of 0, 15, 23, and 30 nm.
(Color online) Bright-field XTEM images of GaAs/Al0.3Ga0.7As/Ge heterostructures in the  projection with Al0.3Ga0.7As interlayer thicknesses of (a) 15 nm; (b) 23 nm; (c) 30 nm; and (d) a high-resolution image of GaAs/30 nm-thick Al0.3Ga0.7As/Ge.
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