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Effect of the Al0.3Ga0.7As interlayer thickness upon the quality of GaAs on a Ge substrate grown by metal-organic chemical vapor deposition
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10.1116/1.4809514
/content/avs/journal/jvstb/31/4/10.1116/1.4809514
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/4/10.1116/1.4809514
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Molten KOH etch pattern of a GaAs epilayer grown directly on a Ge substrate without an AlGaAs interlayer. The AFM images of GaAs epilayers in a 10 m × 10 m scan area with AlGaAs interlayer thicknesses of (b) 0 nm, (c) 15 nm, (d) 23 nm, and (e) 30 nm.

Image of FIG. 2.
FIG. 2.

(Color online) Mosaic spread (blue stars) and FWHMs (green squares) of asymmetric (224) RSMs of the GaAs epilayers as a function of the AlGaAs interlayer thickness.

Image of FIG. 3.
FIG. 3.

(Color online) Raman spectra of GaAs epilayers on a Ge substrate with different AlGaAs interlayer thicknesses of 0, 15, 23, and 30 nm. The inset figure shows I vs the AlGaAs interlayer thickness.

Image of FIG. 4.
FIG. 4.

(Color online) Room temperature PL of GaAs/ AlGaAs/Ge structures with different AlGaAs thicknesses of 0, 15, 23, and 30 nm.

Image of FIG. 5.
FIG. 5.

(Color online) Bright-field XTEM images of GaAs/AlGaAs/Ge heterostructures in the [110] projection with AlGaAs interlayer thicknesses of (a) 15 nm; (b) 23 nm; (c) 30 nm; and (d) a high-resolution image of GaAs/30 nm-thick AlGaAs/Ge.

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/content/avs/journal/jvstb/31/4/10.1116/1.4809514
2013-06-04
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of the Al0.3Ga0.7As interlayer thickness upon the quality of GaAs on a Ge substrate grown by metal-organic chemical vapor deposition
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/4/10.1116/1.4809514
10.1116/1.4809514
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