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Nonvolatile memory characteristics of thin-film transistors using hybrid gate stack composed of solution-processed indium-zinc-silicon oxide active channel and organic ferroelectric gate insulator
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10.1116/1.4809996
/content/avs/journal/jvstb/31/4/10.1116/1.4809996
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/4/10.1116/1.4809996
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic cross-sectional diagram and (b) microscope photo image of the fabricated IZSiO OfeOx-MTFTs.

Image of FIG. 2.
FIG. 2.

(Color online) (a) X-ray diffraction patterns, (b) AFM images of surface morphologies, and (c) optical transmittance spectra of the solution-processed IZSiO films of varying Si content (0, 2, 5, and 10 mol. %) prepared on glass substrates and annealed at 450 °C. (d) Variations of measured electrical conductivity of the IZSiO layers with various Si amounts through the Arrhenius plot. The substrate temperature was swept from 30 to 400 °C in the forward and reverse directions with a ramping rate of 5 °C/min.

Image of FIG. 3.
FIG. 3.

(Color online) P–E characteristics of the fabricated Al/P(VDF–TrFE)/Pt capacitor with 100 m-diameter top electrode (a) before and (b) after the final annealing at 150 °C. The measurement frequency was 1 kHz. (c) I – V transfer characteristics of the fabricated M-TFTs using IZSiO channel layers with different Si amounts of 0, 2, 5, and 10 mol. %. The transfer curves were measured in a double sweep mode of V ranging from −14 to 12 V at the V of 1.0 V.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Variations in the programmed I of on and off states for the fabricated OfeOx-MTFTs using IZSiO channel layers with different Si amounts of 0, 2, 5, and 10 mol. % varying the pulse duration of programming voltage signal from 1 s to 100 ms. The programming voltages for the memory on and off states were +15 and −15 V, respectively. (b) Summary of the estimated values of memory I for each fabricated OfeOx-MTFTs vs the incorporated Si amounts at various pulse durations of programming voltage signals.

Image of FIG. 5.
FIG. 5.

(Color online) (a) Variations in the programmed I of on and off states for the Si2 device when the programming voltage signals were repeatedly applied with 1000 cycles. (b) Variations in I's programmed into on and off states with the lapse of retention time for 3600 s for the Si2 device. The programming voltages of on and off states were +15 and −15 V, respectively. The read-out V and the V were fixed at −1.0 and 1.0 V, respectively.

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/content/avs/journal/jvstb/31/4/10.1116/1.4809996
2013-06-10
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonvolatile memory characteristics of thin-film transistors using hybrid gate stack composed of solution-processed indium-zinc-silicon oxide active channel and organic ferroelectric gate insulator
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/4/10.1116/1.4809996
10.1116/1.4809996
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