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Feature profile evolution during shallow trench isolation etching in chlorine-based plasmas. III. The effect of oxygen addition
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10.1116/1.4810908
/content/avs/journal/jvstb/31/4/10.1116/1.4810908
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/4/10.1116/1.4810908

Figures

Image of FIG. 1.
FIG. 1.

Poly-Si etching rate as a function of ion energies in Cl plasmas with 0% and 6% O addition (5% Ar addition) under 500 W ECR power and 5 mT. The lines represent fitting of the data by the TML model.

Image of FIG. 2.
FIG. 2.

(a) Experimentally measured poly-Si etching rate (circle) and normalized chlorine radical densities (square) under different O to total gas flow ratio under 500 W ECR power, 5 mT and 80 eV ion energy. Data points for the simulated etch rate by the feature scale model are shown as crosses. The inset shows the etching yield as a function of Cl flux to ion flux ratio reported by Chang (Ref. ) Higher ion energy cases (200 eV and 500 eV) were obtained by extrapolating the experimental data. (b) TML simulation of the etch rate as a function of O addition to the plasma.

Image of FIG. 3.
FIG. 3.

(Color online) Surface morphology measured by AFM for the surfaces etched by Cl plasmas with (a) 0% and (b) 10% of O addition under 5 mT pressure, 80 eV ion energy, and 500 W ECR power.

Image of FIG. 4.
FIG. 4.

XPS spectra of p-Si surfaces etched using Cl plasmas with 0, 3, and 6% of O addition under 5 mT, 500 W ECR power, and 80 eV ion energy.

Image of FIG. 5.
FIG. 5.

(a) Elemental composition of Si, O and Cl of the surface etched using Cl plasma with O addition for 2 min. Under 5mT, 500W ECR power and 80 eV ion energy with 5% Ar addition. The Cl (2p), O (1s) and Si (2p) peaks are normalized by their atomic sensitivity factor. (b) TML prediction of the surface composition. V represents vacancy fraction.

Image of FIG. 6.
FIG. 6.

(a) Dominant ionic species measured by the mass spectrometer while etching silicon using Cl plasmas with 0% and 6% of O addition under 5 mT, 500 W ECR power and 80 eV ion energy. (b) TML simulation of the ionic etch products.

Image of FIG. 7.
FIG. 7.

Signal intensity ratio of SiCl ion to Ar ion in Si etching obtained by using the QMS in Cl plasmas with 0% to 10% of O addition under 5 mT, 500 W ECR power, and various ion energy. Lines are to guide the eye only.

Image of FIG. 8.
FIG. 8.

Electron density and the electron temperature of Cl/O plasmas as a function of O percentages addition under 500 W ECR power and 5 mT.

Image of FIG. 9.
FIG. 9.

(a) Etched trench top and bottom sidewall angle as a function of O addition and (b) representative SEM images of the samples etched for 80 s under 500 W, 5 mT, and 80 eV ion energy using Cl plasmas under various degrees of O addition. The scale bars shown are 100 nm.

Image of FIG. 10.
FIG. 10.

(Color online) Comparison of the simulated and experimental etch profiles for samples etched for 40 s (top row) and 80 s (bottom row) at 500 W, 5 mT, and 80 eV ion energy using Cl plasmas under various degrees of O addition.

Tables

Generic image for table
TABLE I.

Reactions rate coefficients and threshold energies for the TML model.

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/content/avs/journal/jvstb/31/4/10.1116/1.4810908
2013-07-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Feature profile evolution during shallow trench isolation etching in chlorine-based plasmas. III. The effect of oxygen addition
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/4/10.1116/1.4810908
10.1116/1.4810908
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