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Thermoelectric properties of single crystal Sc1−xErxAs:InGaAs nanocomposites
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10.1116/1.4810961
/content/avs/journal/jvstb/31/4/10.1116/1.4810961
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/4/10.1116/1.4810961
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Room temperature (a) carrier concentration, (b) mobility, (c) conductivity, and (d) Seebeck coefficient as a function of rare earth concentration for single crystal nanocomposites fabricated from Sc (triangles), Er (squares), and Sc + Er (circles) codeposited with InGaAs on InP substrates.

Image of FIG. 2.
FIG. 2.

(Color online) Seebeck coefficient vs carrier concentration for single crystal InGaAs nanocomposites with ScAs (triangles), ErAs (squares), and ScErAs (circles). The solid line represents the theoretical relationship expected for n-type InGaAs.

Image of FIG. 3.
FIG. 3.

(Color online) Atomic distributions for (a) scandium, (b) indium + gallium, and (c) arsenic determined from atom probe tomography of a 2% ScAs:InGaAs nanocomposite.

Image of FIG. 4.
FIG. 4.

(Color online) Thermal conductivity 3ω measurements as a function of rare earth concentration for single crystal InGaAs nanocomposites embedded with (a) ScAs, (b) ErAs, and (c) ScErAs. The lines and corresponding equations are empirical least squares fits to the experimental results.

Image of FIG. 5.
FIG. 5.

(Color online) Thermoelectric figure of merit as a function of rare earth concentration for single crystal InGaAs nanocomposites embedded with (a) ScAs, (b) ErAs, and (c) ScErAs. The maximum values are achieved for rare earth concentrations less than 0.5%.

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/content/avs/journal/jvstb/31/4/10.1116/1.4810961
2013-06-20
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermoelectric properties of single crystal Sc1−xErxAs:InGaAs nanocomposites
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/4/10.1116/1.4810961
10.1116/1.4810961
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