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Boron nitride growth on metal foil using solid sources
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10.1116/1.4810965
/content/avs/journal/jvstb/31/4/10.1116/1.4810965
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/4/10.1116/1.4810965
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic of the growth method for a h-BN film. (a)A BN source is deposited on Ni or Co foil using the sputtering method or spin-coating. (b) The sample is annealed in a vacuum at 900–1000 °C. (c) A h-BN thin film is formed on not only the front surface of the foil but also on the back surface. In this paper, we focus on the h-BN film formed on the back surface denoted by the dashed line.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Schematic of a device used for electron tunneling measurements. Purple, white, and yellow are SiO, h-BN film, and Au/Cr electrodes, respectively. (b) Optical microscope image of a tunneling device. (c) I-V characteristic of three devices with junction areas of 1.0, 0.25, and 0.1 m. The h-BN thickness was estimated to be 1.4 nm by AFM measurements prior to the device fabrication. (d) Normalized resistance versus barrier thickness calculated from Eq. (1) for some barrier heights (solid lines). The experimental data are also plotted (open circles).

Image of FIG. 3.
FIG. 3.

(Color online) (a) Wide-range XPS of the back surfaces of Ni and Co samples after annealing. (b) B 1s and (c) N 1s XPS of the Ni and Co samples. (d) Ni 2p spectra of the Ni sample and Ref. Ni foil. (e) Co 2p spectra of the Co sample and Ref. Co foil. The B and N source was a-BN film deposited on the front surfaces of the foils. The annealing conditions were 1000 °C for 1 h for the Ni sample and 1000 °C for 4 h for the Co sample.

Image of FIG. 4.
FIG. 4.

(Color online) (a) SEM image and (b) B (KLL), (c) N (KLL), (d)C(KLL), (e) O(KLL), and (f) Co(LMM) Auger maps of a Co sample.

Image of FIG. 5.
FIG. 5.

(Color online) (a) SEM image and (b) B (KLL), (c) N (KLL), (d)C(KLL), (e) O(KLL), and (f) Ni(LMM) Auger maps of a Ni sample. All the images were obtained from the same area.

Image of FIG. 6.
FIG. 6.

(Color online) EBSD pattern of the Co sample. The orientations of the fcc phase are denoted by the colors. The white parts are the hcp phase. The measured area is the same as in Fig. 4 . Scale bar: 20 m.

Image of FIG. 7.
FIG. 7.

(Color online) UV reflection spectra of the back surface of Ni and Co samples. The spectra were shifted in the vertical direction to make them easier to see. “a-BN” and “BA” denote the BN source, and mean sputter-deposited a-BN and spin-coated borane ammonia, respectively. “ref.” is a spectrum from a-BN film deposited on Ni foil. The annealing conditions were 1000 °C for 30 min for Ni:a-BN, 1000 °C for 4 h for Co:a-BN, 900 °C for 30 min for Ni:BA, and 1000 °C for 30 min for Co:BA, respectively.

Image of FIG. 8.
FIG. 8.

(Color online) (a) Cross-sectional TEM image of a BN film. Scale bar: 5 nm. (b) Selected area electron diffraction pattern from the same film as in (a). The BN source was a-BN deposited on Ni foil. The annealing conditions were 1000 °C for 1 h.

Image of FIG. 9.
FIG. 9.

(Color online) Raman spectrum of a BN film transferred to a SiO/Si substrate. The BN source was a-BN deposited on Ni foil. The annealing conditions were 950 °C for 1 h.

Image of FIG. 10.
FIG. 10.

(Color online) (a) Optical microscope image of a h-BN film transferred onto a SiO/Si substrate. The B and N source was a BH-NH film spin-coated on Ni foil. The annealing conditions were 1000 °C for 30 min. The thickness of the film was evaluated to be about 1.5 nm from an AFM measurement. (b) AFM image of another h-BN film grown from a BH-NH film spin-coated on Ni foil. The annealing conditions were 900 °C for 30 min. The image was obtained after transfer to a SiO/Si substrate. (c)Height profile along the line indicated in (b).

Image of FIG. 11.
FIG. 11.

(Color online) (a) UV reflection spectra obtained from the four positions on a Ni sample. Inset: Schematic of the Ni sample and the four measurement positions. (b) B 1s and (c) N 1s XPS obtained from positions 2 and 4.

Image of FIG. 12.
FIG. 12.

(Color online) Annealing time evolution of h-BN peak height in UV reflection spectra obtained from three positions. (a) Ni samples annealed at 900 °C and (b) Co samples annealed at 1000 °C. The B and N source was sputter-deposited a-BN.

Image of FIG. 13.
FIG. 13.

(Color online) UV reflection spectra obtained from the four positions on a Co sample. Inset: Schematic of the Co sample and the four measurement positions. (b) B 1s and (c) N 1s XPS obtained from positions 2 and 4.

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/content/avs/journal/jvstb/31/4/10.1116/1.4810965
2013-06-14
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Boron nitride growth on metal foil using solid sources
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/4/10.1116/1.4810965
10.1116/1.4810965
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