Cross sectional SEM image of three Pt/SiO2/Pt multilayer structures having different SiO2 layer thicknesses, used to calibrate the deposition rate of the dielectric layer; the images correspond to (a) 10, (b) 20, and (c) 40 SiO2 deposition cycles, respectively.
(Color online) EDS profiles obtained across the EBID, at the center of Pt (a), SiO2 (b), and W (c) test strips.
(Color online) Flowchart of the EBID fabrication process of the MIM diodes (not in scale). The top view and cross view of the layer sequence is shown for each step of the fabrication process.
SEM image of a typical MIM diode fabricated by EBID.
(Color online) Scheme showing the X-TEM grid used to deposit the MIM for TEM cross section analysis; (a) edge-on view of the grid (as viewed by the electrons in the FIB machine during the TEM sample preparation) and (b) front-view of the grid (as viewed by the electron beam in the TEM).
High magnification bright field TEM images of Pt/SiO2/W structures having the SiO2 layer with a thickness of (a) (4.6 ± 0.7) nm (3 cycles) and (b) (7.4 ± 0.8) nm (5 cycles), respectively. Selected area diffraction pattern of the Pt deposited layer, whose indexing is reported in Table III (inset).
(Color online) Typical current–voltage (I-V) curve of a device fabricated by EBID and current asymmetry ratio vs bias voltage (inset).
Optimized conditions and parameters used for the deposition of the layers forming the device and experimental results obtained from their morphological, chemical and electrical characterization (the rates of Pt and W refer to deposition on an area of 1 μm2).
Geometrical parameters of the MIM structures and thickness of the layers forming the MIM diodes.
Indexing of the electron diffraction pattern reported as inset of Fig. 6(b) .
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