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Optimization of electron beam induced deposition process for the fabrication of diode-like Pt/SiO2/W devices
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10.1116/1.4811824
/content/avs/journal/jvstb/31/4/10.1116/1.4811824
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/4/10.1116/1.4811824

Figures

Image of FIG. 1.
FIG. 1.

Cross sectional SEM image of three Pt/SiO/Pt multilayer structures having different SiO layer thicknesses, used to calibrate the deposition rate of the dielectric layer; the images correspond to (a) 10, (b) 20, and (c) 40 SiO deposition cycles, respectively.

Image of FIG. 2.
FIG. 2.

(Color online) EDS profiles obtained across the EBID, at the center of Pt (a), SiO (b), and W (c) test strips.

Image of FIG. 3.
FIG. 3.

(Color online) Flowchart of the EBID fabrication process of the MIM diodes (not in scale). The top view and cross view of the layer sequence is shown for each step of the fabrication process.

Image of FIG. 4.
FIG. 4.

SEM image of a typical MIM diode fabricated by EBID.

Image of FIG. 5.
FIG. 5.

(Color online) Scheme showing the X-TEM grid used to deposit the MIM for TEM cross section analysis; (a) edge-on view of the grid (as viewed by the electrons in the FIB machine during the TEM sample preparation) and (b) front-view of the grid (as viewed by the electron beam in the TEM).

Image of FIG. 6.
FIG. 6.

High magnification bright field TEM images of Pt/SiO/W structures having the SiO layer with a thickness of (a) (4.6 ± 0.7) nm (3 cycles) and (b) (7.4 ± 0.8) nm (5 cycles), respectively. Selected area diffraction pattern of the Pt deposited layer, whose indexing is reported in Table III (inset).

Image of FIG. 7.
FIG. 7.

(Color online) Typical current–voltage (I-V) curve of a device fabricated by EBID and current asymmetry ratio vs bias voltage (inset).

Tables

Generic image for table
TABLE I.

Optimized conditions and parameters used for the deposition of the layers forming the device and experimental results obtained from their morphological, chemical and electrical characterization (the rates of Pt and W refer to deposition on an area of 1 m).

Generic image for table
TABLE II.

Geometrical parameters of the MIM structures and thickness of the layers forming the MIM diodes.

Generic image for table
TABLE III.

Indexing of the electron diffraction pattern reported as inset of Fig. 6(b) .

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/content/avs/journal/jvstb/31/4/10.1116/1.4811824
2013-06-25
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optimization of electron beam induced deposition process for the fabrication of diode-like Pt/SiO2/W devices
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/4/10.1116/1.4811824
10.1116/1.4811824
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