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Fabrication of high-density Si and SixGe1−x nanowire arrays based on the single step plasma etching process
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10.1116/1.4812792
/content/avs/journal/jvstb/31/4/10.1116/1.4812792
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/4/10.1116/1.4812792

Figures

Image of FIG. 1.
FIG. 1.

Graph of the SiO etch rates as function of the HBr flow. The etching conditions are a 30 sccm SF flow; a 60 sccm O2flow; 0–60 sccm HBr flow; rf bias power of 1000 W; rf source power of 150 W; and a pressure of 25 mTorr. A peak in the etch rates is reached for a 30 sccm HBr flow.

Image of FIG. 2.
FIG. 2.

SEM micrographs of Si NWs etched with run 1 conditions.

Image of FIG. 3.
FIG. 3.

SEM micrographs of Si NWs etched with run 2 conditions.

Image of FIG. 4.
FIG. 4.

SEM micrographs of Si NWs etched with run 3 conditions. The diameter of the NWs is 200 nm and the length is 12 m.

Image of FIG. 5.
FIG. 5.

(Color online) SEM image of the Si NW array after HF dip.

Image of FIG. 6.
FIG. 6.

(Color online) SEM image of the Si NW sidewall roughness after SF/0/HBr/SiF etching. (a) Top of the NWs (after HF dip). (b) Bottom of the NWs (after HF dip).

Image of FIG. 7.
FIG. 7.

(Color online) Si NW sidewall roughness after curing with 800 °C H annealing.

Image of FIG. 8.
FIG. 8.

(Color online) (a) SEM micrographs of Si NWs obtained via Cl2/N2 etching. The diameter is 150 nm, and the length is 1.5 m. (b) SEM high-magnification view of the NW sidewall showing the low roughness of these NWs.

Image of FIG. 9.
FIG. 9.

SEM view of 250 nm-diameter and 2 m-long SiGe NWs after Cl/N etching. The “bowing effect” can be seen on the sidewalls.

Image of FIG. 10.
FIG. 10.

SEM view of 90 nm-diameter and 1 m-long SiGe NWs after Cl/N etching. No bowing can be observed on the sidewalls.

Tables

Generic image for table
TABLE I.

Summary of experimental gas flow in the SF/O/HBr/SiF chemistry.

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/content/avs/journal/jvstb/31/4/10.1116/1.4812792
2013-07-12
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of high-density Si and SixGe1−x nanowire arrays based on the single step plasma etching process
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/4/10.1116/1.4812792
10.1116/1.4812792
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