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Characterization of Al2O3/GaAs interfaces and thin films prepared by atomic layer deposition
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10.1116/1.4813436
/content/avs/journal/jvstb/31/4/10.1116/1.4813436
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/4/10.1116/1.4813436
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Measured and model fits of the ellipsometric parameters, Ψ and Δ, at θ = 70° for thin films on GaAs(100) grown to a thickness of (a) 0.62 nm (4 cycles) and 10 nm (80 cycles) using plasma-assisted ALD, and to a thickness of (b) 0.62 nm (8 cycles) and 5 nm (80 cycles) using thermal ALD.

Image of FIG. 2.
FIG. 2.

(Color online) Dependence of the bulk AlO film thickness and interfacial layer thickness upon the number of ALD cycles for thermal and plasma-assisted ALD.

Image of FIG. 3.
FIG. 3.

(Color online) SE map showing the uniformity of film thickness over the surface of the 4-in. wafer for a plasma-assisted ALD film grown using four cycles.

Image of FIG. 4.
FIG. 4.

(Color online) XPS of AlO-films (a) grown on GaAs(100) using plasma-assisted ALD for different thicknesses. (b) Detail of the low binding energy region for a 4 nm-thick film. (c) Gaussian fit of Al-2s for a 4 nm-thick plasma ALD thin film. (d) Gaussian fits of O-1s for a 10 nm-thick thermal ALD thin film, and for 10 nm- and 1 nm-thick plasma ALD thin films.

Image of FIG. 5.
FIG. 5.

Atomic ratio, O:Al, calculated from the relative intensities of Al-2s and O-1s core-level peaks plotted as a function of the number of ALD cycles. The broken line marks the expected stoichiometric ratio of 1.5.

Image of FIG. 6.
FIG. 6.

(Color online) XPS core-level spectra of Ga-3p (a)–(d) and As-3p (e)–(h) and their deconvolution for thermal (A) and plasma (B) ALD-AlO films grown on s.i. GaAs(100) using the number of cycles as given in the figure. (Ga,As)-oxide related peaks of the interfacial layer are marked as oxid. p and oxid. p.

Image of FIG. 7.
FIG. 7.

(Color online) Thermal cycling dependence of stress in 5 nm-thick plasma ALD-AlO thin films grown on 2-in. (a) GaAs(100) and (b) Si(100) substrates at 300 °C. Measurement points correspond to 4 consecutive thermal cycles. For the sake of comparison, the y-axis range has been kept constant for all plots.

Image of FIG. 8.
FIG. 8.

Thermal cycling dependence of stress in 5 nm-thick thermal ALD-AlO thin films grown on 2-in. (a) GaAs(100) and (b) Si(100) substrates at 300 °C.

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/content/avs/journal/jvstb/31/4/10.1116/1.4813436
2013-07-15
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of Al2O3/GaAs interfaces and thin films prepared by atomic layer deposition
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/4/10.1116/1.4813436
10.1116/1.4813436
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