Schematic of the ion beam sputtering system. All inside walls of the chamber (excepting surfaces of target and substrate) are wholly covered by shields set in zone 1 (near the sputtering targets and the substrate) or zone 2 (along the interior vacuum chamber wall).
Structure of EUV mask blank comprising Mo/Si multilayers and Ru capping layer on the front side of the quartz glass substrate. CrN conductive layer is coated on the back side of the substrate.
Cross-sectional TEM image of the [Mo/Si]50 multilayer mask blank film on the glass substrate.
SEM image of the shield surface with roughness Ra 4.6 μm.
Relationships between Si-rich particle defect counts per mask blank and shield surface roughness Ra for experiments 1 to 3. The error bar represents the standard deviation for each experiment.
Relationships between Si-rich particle defect counts per mask blank and inverse square of shield surface roughness Ra; (a) data collected from experiments 1 to 3 and (b) the data of Ra 2 in zone 2, collected from experiments 4 to 6. The error bar represents the standard deviation for each experiment.
Shield surface roughness Ra 1 and Ra 2 used in experiments 1 to 6.
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