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Influence of shield roughness on Mo/Si defect density for extreme ultraviolet lithography mask blanks
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10.1116/1.4813776
/content/avs/journal/jvstb/31/4/10.1116/1.4813776
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/4/10.1116/1.4813776

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the ion beam sputtering system. All inside walls of the chamber (excepting surfaces of target and substrate) are wholly covered by shields set in zone 1 (near the sputtering targets and the substrate) or zone 2 (along the interior vacuum chamber wall).

Image of FIG. 2.
FIG. 2.

Structure of EUV mask blank comprising Mo/Si multilayers and Ru capping layer on the front side of the quartz glass substrate. CrN conductive layer is coated on the back side of the substrate.

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM image of the [Mo/Si] multilayer mask blank film on the glass substrate.

Image of FIG. 4.
FIG. 4.

SEM images of a typical particle defect on the film (experiment 2 in Table I ); (a) overhead view and (b) cross-sectional view produced by FIB etching. Points 1 (multilayer site) and 2 (particle site) shown in (b) indicate the sites of EDX analysis (see Fig. 5 ).

Image of FIG. 5.
FIG. 5.

EDX spectra of the film cross-section; (a) multilayer site at point 1 in Fig. 4(b) and (b) particle defect site at point 2 in Fig. 4(b) .

Image of FIG. 6.
FIG. 6.

SEM image of the shield surface with roughness 4.6 m.

Image of FIG. 7.
FIG. 7.

Relationships between Si-rich particle defect counts per mask blank and shield surface roughness for experiments 1 to 3. The error bar represents the standard deviation for each experiment.

Image of FIG. 8.
FIG. 8.

Relationships between Si-rich particle defect counts per mask blank and inverse square of shield surface roughness ; (a) data collected from experiments 1 to 3 and (b) the data of in zone 2, collected from experiments 4 to 6. The error bar represents the standard deviation for each experiment.

Tables

Generic image for table
TABLE I.

Shield surface roughness and used in experiments 1 to 6.

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/content/avs/journal/jvstb/31/4/10.1116/1.4813776
2013-07-16
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of shield roughness on Mo/Si defect density for extreme ultraviolet lithography mask blanks
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/4/10.1116/1.4813776
10.1116/1.4813776
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