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Improved reliability of Ti/ZrN/Pt resistive switching memory cells using hydrogen postannealing
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10.1116/1.4813792
/content/avs/journal/jvstb/31/4/10.1116/1.4813792
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/4/10.1116/1.4813792
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Surface morphologies of the ZrN films for the (a) N and (b) N + H annealed samples using AFM.

Image of FIG. 2.
FIG. 2.

(Color online) X-ray diffraction curves measured for the as-deposited, vacuum, N and N + H annealed samples in the scanned range of 20°–80°.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Typical current–voltage curve characteristics at room temperature for the N and N + H annealed samples in sweeping DC-voltages according to the following sequence: 0 V → +1.5 V → 0 V → −1.5 V → 0 V. (b) The probability plots of the set and reset voltage distributions for the the N and N + H annealed samples with 100 DC cycles.

Image of FIG. 4.
FIG. 4.

(Color online) Linear fitting for the curve using a log–log scale for the N and N + H annealed samples.

Image of FIG. 5.
FIG. 5.

(Color online) (a) Set and reset current variations under temperature stress from 25 to 130 °C and (b) the retention characteristics at 25 and 80 °C for the N and N + H annealed samples. (c) The current instability at the LRS and HRS measured under stress biases of ±0.2 and ±0.3 V for the N and N + H annealed samples, respectively.

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/content/avs/journal/jvstb/31/4/10.1116/1.4813792
2013-07-16
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved reliability of Ti/ZrN/Pt resistive switching memory cells using hydrogen postannealing
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/4/10.1116/1.4813792
10.1116/1.4813792
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