(Color online) RHEED patterns of LT nucleation layer (a) before annealing, (b) after annealing; (c) 500 nm HT ZnO layer.
(Color online) RMS roughness as function of growth temperature for LT nucleation temperature of 300 °C and 350 °C. The inset graphs are 1 μm × 1 μm AFM images of the best films grown under the two nucleation temperatures.
(Color online) RMS roughness as a function of Zn cell temperature around stoichiometric conditions. The inset graphs are 5 μm × 5 μm AFM images with Zn cell temperature of (a) 350 °C, (b) 365 °C, (c) 370 °C, and (d) 378 °C.
(Color online) (a) Triple-crystal ω-2θ RC in the vicinity of ZnO (0002) reflection. Visual asymmetry of the RC is related to additional compressed elastic stress, induced by predislocation clusters and closed dislocation loops; (b) triple-crystal ω RC of ZnO (0002) reflection. The inset is the magnified graph in the dashed area.
(Color online) Asymmetrical Reciprocal Space Map around ZnO (11–24) diffraction spot. Drawn line shows the ω scan direction.
Typical growth conditions for ZnO.
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