1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Empirical correlation for minority carrier lifetime to defect density profile in germanium on silicon grown by nanoscale interfacial engineering
Rent:
Rent this article for
USD
10.1116/1.4816488
/content/avs/journal/jvstb/31/5/10.1116/1.4816488
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/5/10.1116/1.4816488

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Ge-on-Si growth and annealing methods are characterized and compared by PCD lifetime measurements. In this work, the four growth methods are referred to as: (a) direct Ge/Si, (b) sealed oxide and postgrowth annealed, (c) unsealed oxide and pregrowth annealed, and (d) unsealed oxide and pre/postgrowth annealed.

Image of FIG. 2.
FIG. 2.

(Color online) Cross-sectional TEM images from each Ge growth method: (a) direct Ge/Si (method 1), (b) sealed oxide and postgrowth annealed (method 2), (c) unsealed oxide and pregrowth annealed (method 3), and (d) unsealed oxide and pre/postgrowth annealed (method 4).

Image of FIG. 3.
FIG. 3.

(Color online) Boron diffusion profiles in Ge grown on low-doped, high-resistivity and high-doped, low-resistivity Si substrates. Assuming that the Si substrate is an infinite source of boron, boron diffuses into Ge mostly during annealing steps.

Image of FIG. 4.
FIG. 4.

(Color online) Comparison of measured minority carrier lifetimes in 3-m-thick Ge films grown by the four growth methods.

Image of FIG. 5.
FIG. 5.

(Color online) Exponential decay fit to the defect density measured at various distances from the Ge-Si interface for the unsealed and pre/postgrowth annealed method.

Image of FIG. 6.
FIG. 6.

(Color online) Plot of 1/τ vs for Ge films grown on low-doped, high-resistivity and high-doped, low-resistivity Si substrates by the unsealed oxide and pre/postgrowth annealing method.

Image of FIG. 7.
FIG. 7.

Ge bulk lifetime as a function of distance from the Ge-Si interface of unsealed oxide and pre/postgrowth annealed Ge films grown on low-doped, high-resistivity and high-doped, low-resistivity Si substrates.

Tables

Generic image for table
TABLE I.

Etch pit density of Ge films grown on Si substrates with various resistivities.

Loading

Article metrics loading...

/content/avs/journal/jvstb/31/5/10.1116/1.4816488
2013-07-31
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Empirical correlation for minority carrier lifetime to defect density profile in germanium on silicon grown by nanoscale interfacial engineering
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/5/10.1116/1.4816488
10.1116/1.4816488
SEARCH_EXPAND_ITEM