(Color online) (a) Deposition of Si3N4 passivation layer, (b) wrapping wafer with polyimide tape, (c) spin coating PI2611 polyimide, (d) removing polyimide tape and curing the polyimide, (e) deposition of PI5878G substrate polyimide, (f) separating the flexible substrate from the rigid silicon wafer. It needs to mention here that this figure only depicts substrate formation and release. More device dependent fabrication steps are needed to fabricate a device.
(Color online) (a) Removing the edge of the flexible substrate from silicon wafer using a cutting tool; (b) a piece of flexible substrate after removal from the silicon wafer which is also demonstrating a sample metallization layer fabricated through sputtering and lift-off process.
Glass transition temperature of typical polyimide/flexible substrate materials.
Comparison of coefficient of thermal expansion and Young's modulus of the cured polyimides used with the silicon ⟨111⟩ carrier wafer.
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