Schematic of Ga0.5In0.5P/GaAs HBT structure.
Comparison of simulated collector and base currents (Ic and Ib) of 100 × 100 μm2 Ga0.5In0.5P/GaAs HBT with IQE1 experimental data.
Plot of simulated base current density components: Jrb (quasineutral recombination), Jscr (space–charge region recombination) and Jre (injection current) of device IQE1 as a function of base–emitter voltage, VBE.
Comparison of simulated DC current gain of the Ga0.5In0.5P/GaAs HBT (IQE2) with its experimental data.
Plot of current gain data (simulated and experimental) as a function of collector current density for IQE1. The same has been compared with the corresponding data of different practical devices listed in Table II .
Comparative graph of current gain at different base sheet resistance values of various practical devices listed in Table II and the present one for three different collector current densities, JC. The base width (Å) and base doping (cm−3) in e-notation are also quoted in the text box.
Plot of simulated offset voltage of GaInP/GaAs HBT (IQE2) as a function of base current along with the Cheng's simulation result for comparison.
Plot of simulated electric field in the collector space–charge region of device (IQE2) as a function of distance X (X = 0 is taken as B-C junction interface) for various collector–emitter voltages, Vce.
Plot of simulated collector current as a function of higher collector–emitter voltage (toward avalanche breakdown) for the base currents, Ib: 14, 47 μA of designed Ga0.5In0.5P/GaAs HBT (IQE2).
Simulated multiplication factor as a function of collector–emitter voltage at two initial values of collector current, Ic: 1.5, 5.15 mA of the device (IQE2).
Designed structure parameters of Ga0.5In0.5P/GaAs HBT (IQE2) along with respective experimental results of IQE1 and IQE2.
Structure parameters of various practical devices.
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