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Quantitative analysis of dc characteristics of Ga0.5In0.5P/GaAs heterojunction bipolar devices
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Image of FIG. 1.
FIG. 1.

Schematic of GaInP/GaAs HBT structure.

Image of FIG. 2.
FIG. 2.

Comparison of simulated collector and base currents (Ic and Ib) of 100 × 100m2 GaInP/GaAs HBT with IQE1 experimental data.

Image of FIG. 3.
FIG. 3.

Plot of simulated base current density components: Jrb (quasineutral recombination), Jscr (space–charge region recombination) and Jre (injection current) of device IQE1 as a function of base–emitter voltage, V.

Image of FIG. 4.
FIG. 4.

Comparison of simulated DC current gain of the GaInP/GaAs HBT (IQE2) with its experimental data.

Image of FIG. 5.
FIG. 5.

Plot of current gain data (simulated and experimental) as a function of collector current density for IQE1. The same has been compared with the corresponding data of different practical devices listed in Table II .

Image of FIG. 6.
FIG. 6.

Comparative graph of current gain at different base sheet resistance values of various practical devices listed in Table II and the present one for three different collector current densities, J. The base width (Å) and base doping (cm−3) in e-notation are also quoted in the text box.

Image of FIG. 7.
FIG. 7.

Plot of simulated offset voltage of GaInP/GaAs HBT (IQE2) as a function of base current along with the Cheng's simulation result for comparison.

Image of FIG. 8.
FIG. 8.

Plot of simulated electric field in the collector space–charge region of device (IQE2) as a function of distance X (X = 0 is taken as B-C junction interface) for various collector–emitter voltages, Vce.

Image of FIG. 9.
FIG. 9.

Plot of simulated collector current as a function of higher collector–emitter voltage (toward avalanche breakdown) for the base currents, Ib: 14, 47 A of designed GaInP/GaAs HBT (IQE2).

Image of FIG. 10.
FIG. 10.

Simulated multiplication factor as a function of collector–emitter voltage at two initial values of collector current, Ic: 1.5, 5.15 mA of the device (IQE2).


Generic image for table

Designed structure parameters of GaInP/GaAs HBT (IQE2) along with respective experimental results of IQE1 and IQE2.

Generic image for table

Structure parameters of various practical devices.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantitative analysis of dc characteristics of Ga0.5In0.5P/GaAs heterojunction bipolar devices