Typical chemical structure of polymer used in 193-nm photoresist formulation. It consists of MAMA in the leaving group, α-GBLMA in the lactone group, and HAMA in the polar group.
(Color online) (a) Determination of glass transition temperature, Tg, by DMA and (b) TGA of IM5010 photoresist.
(Color online) Photoresist film thickness evolution with bake temperature determined by ellipsometry: (◻) as-deposited resist with initial thickness of 130 nm and (○) underexposed resist with initial thickness of 113 nm.
(Color online) FTIR spectra evolution of photoresist films before (as-deposited) and after bake with temperatures ranging from 180 to 220 °C. (a)CO stretching region, (b) COC stretching region, and (c) CH2, CH3 stretching region.
(Color online) (a) Evolution with bake temperature of isolated resist pattern profiles reconstructed by CD-AFM. (b) Evolution with bake temperature of isolated and dense resist pattern CD determined by CD-SEM.
(Color online) PSDs of the photoresist line width after lithography and after thermal processing using bake temperatures ranging from 120 to 200 °C for (a) isolated lines and (b) dense lines. Open symbols stand for experimental data and solid lines represent theoretical fits. The x abscise represents the wave number k = 2π/λ, where λ is the roughness period. After equipment noise removal from the spectra, PSDs are arbitrarily readjusted to a σnoise of 1 to allow comparison. Low-frequency roughness components σLF are defined as frequency range below 0.0393 cm−1, i.e., period above 160 nm.
(Color online) Evolution with bake temperature of (a) the normalized true LWR and (b) the roughness parameters (ξ and α) for isolated and dense lines. Initial isolated and dense pattern LWRs are 5.3 and 7.1 nm, respectively.
(Color online) Evolution with bake temperature of high-(σHF) and low-(σLF) frequency roughness components of LWR for (a) isolated and (b)dense lines.
Contrast curve experiment.
(Color online) FTIR spectra evolution with bake temperature ranging from 120 to 200 °C of underexposed photoresist film. (a) COC stretching region, (b) OH stretching region, and (c) CH2, CH3 stretching region.
(Color online) (a) Determination by DMA of the glass transition temperature, Tg, of underexposed resist film before and after a bake at 200 °C; (b) Thermal gravimetry analyses of underexposed resist.
Evolution of RMS roughness with bake temperature for underexposed resist film.
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