Stress induced in  oriented Si circular micropillars by coatings of low pressure chemical vapor deposited10B, SiyNx, and plasma enhanced chemical vapor deposited SiO2 were measured using micro-Raman spectroscopy. Both tensile and compressive strains in the Si micropillars were observed. Exceptionally large stresses were found to exist in some of the measured Si micropillars. The cross-sectional shapes of these structures were shown to be an important factor in correlating their strain concentrations which could fracture the micropillar.
Received 08 July 2013Accepted 03 October 2013Published online 22 October 2013
The authors acknowledge the assistance of Chris Orme with Raman measurements. This work has been partially supported by the U.S. Department of Homeland Security, Domestic Nuclear Detection Office, under competitively awarded IAA HSHQDC-08-C-00874. This support does not constitute an express or implied endorsement on the part of the Government. This work has been partially supported by LLNL Laboratory Directed Research and Development. This work was performed under the auspices of the U.S. DOE by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344, LLNL-JRNL-426150.
Article outline: I. INTRODUCTION II. FABRICATION AND MEASUREMENT III. RAMAN ANALYSIS IV. CONCLUSIONS
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