(Color online) Evolution of the reflection RHEED surface reconstructions under sequential changes in the group-V overpressure for GaAs (a), AlAs (b), and InAs (c). The brightness of each image was adjusted independently.
(Color online) Evolution of the reflection RHEED surface reconstructions under sequential changes in the group-V overpressure for GaSb (a), AlSb (b), and InSb (c). The brightness of each image was adjusted independently.
(Color online) Atomic force microscope topography of the GaAs sample (a) and the GaSb sample (b) following exposure to the alternative goup-V overpressure. The dramatic differences in the surface features are the result of As for Sb exchange in the GaSb sample.
(Color online) Change in the Gibbs free energy for Al, In, and Ga arsenide–antimonide alloys. The negative values for all ternaries indicate that the reactions will proceed until all of the antimony has been replaced with arsenic.
X-TEM images for AlxGaAsySb layers on a metamorphic GaSb buffer: (a) grown with a mixed arsenic and antimony overpressure and (b) with only antimony overpressure during growth interruptions.
Sequence of overpressure steps applied during the surface stability experiment.
Comparison of the standard enthalpies, entropies, and Gibbs free energy of arsenide and antimonide group-V exchange reactions.
Article metrics loading...
Full text loading...