(Color online) Id–Vg curves of the TFTs with Al2O3 ncy of (a) 0, (b) 10, (c) 15, (d) 20, (e) 30, and (f) only O3 treated by 30 pulses in the same ALD chamber. Inset figure in (a) shows the schematic structure of the TFT.
(Color online) (a) Variations in the Vth, and subthreshold slope, and (b) mobility as a function of ALD Al2O3 deposition cycle number. Data for the first measurement and after 100 days are shown.
(Color online) (a) Dielectric functions of a-IGZO films extracted from the optical model analyses. The ε1 and ε2 denote the real and the imaginary parts of the dielectric functions, respectively. (b) Simulated Id–Vg curves of the TFTs having mobile carrier density of 2.2 × 1017 (circle symbols), and 8.0 × 1017 cm−3 (square symbols). Also shown are the curves for the TFT with heavily damaged back-channel surface (carrier concentration of 2.2 × 1018 cm−3, DL thickness of 20 nm, triangle symbols).
(Color online) Core level XPS spectra of a-IGZO film for (a) In 3d5/2, (b) Zn 3p3/2, and (c) Ga 3d5/2 (In 4d3/2), where the ALD cycles were 10, 20, and 30, respectively. Data for the O3-treated case were also included.
(Color online) (a) Schematic diagram and equivalent circuit of fabricated P++-Si/a-IGZO junction diodes. (b) C-V results of the junction diode with ALD cycle numbers of 0 and 20. Data immediately after the fabrication (within 1 h) and 100 days are shown.
Optical parameters for a-IGZO film according to the ALD Al2O3 deposition cycle extracted from the SE-spectra fitting results. The E 0,TL was fixed at 3.7 eV.
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