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Study of crystallographic tilt and surface morphology on epitaxial lateral overgrown semipolar (11-22) GaN
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10.1116/1.4827825
/content/avs/journal/jvstb/31/6/10.1116/1.4827825
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/6/10.1116/1.4827825
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

OM images of 100 nm (a) and 240 nm-thick (b) SiO patterned semipolar (11-22) ELO-GaN films with the constant pattern width of 4 × 10 m.

Image of FIG. 2.
FIG. 2.

(Color online) RMS roughness of 100 nm- and 240 nm-thick SiO patterned semipolar (11-22) ELO-GaN film as a function of SiO pattern width.

Image of FIG. 3.
FIG. 3.

(Color online) X-ray rocking curves of semipolar (11-22) ELO-GaN films with 100 nm- (a) and 240 nm- (b) thick SiO pattern by using x-ray incident beam directions of [11-2-3]. Insets show XRC FWHM of semipolar ELO-GaN films as a function of SiO pattern width.

Image of FIG. 4.
FIG. 4.

(Color online) X-ray rocking curves of semipolar (11-22) ELO-GaN films with 100 nm- (a) and 240 nm- (b) thick SiO pattern by using x-ray incident beam directions of [1-100]. Insets show XRC FWHM of semipolar ELO-GaN films as a function of SiO pattern width.

Image of FIG. 5.
FIG. 5.

(Color online) Room temperature PL intensity of 100 nm and 240 nm-thick SiO patterned semipolar (11-22) ELO-GaN films as a function of SiO pattern width.

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/content/avs/journal/jvstb/31/6/10.1116/1.4827825
2013-10-31
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of crystallographic tilt and surface morphology on epitaxial lateral overgrown semipolar (11-22) GaN
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/31/6/10.1116/1.4827825
10.1116/1.4827825
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