Schematic showing the adjustment of zoom and rotation value. (a) If the gap or overlap between two adjacent writing fields is ΔX, then the zoom value should be adjusted by a factor of ΔX/X. (b) If misalignment along the vertical direction is ΔY, then the rotation value should be adjusted by Δθ = tan−1 [(ΔY/2)/(X/2)] = tan−1 (ΔY/X) degree.
Contrast curve for nitrocellulose exposed at 20 keV (without ex-situ development).
(a) Pattern design at the writing field boundary; (b) SEM image of a pattern exposed in nitrocellulose at the boundary of two adjacent writing fields, showing significant misalignment of 82 nm and 150 nm along X and Y directions, respectively; (c) SEM image of the exposed pattern showing negligible (<50 nm) misalignment.
SEM image of Cr line array pattern across two adjacent writing fields using optimal zoom and rotation values for writing field alignment, showing negligible stitching error.
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