(Color online) HAADF STEM images of samples A (a), B (b), and E (c), showing contact morphology differences after annealing at different temperatures.
(Color online) EDX line profile across the contact metal of sample E showing metal intermixing.
High-resolution cross-section electron micrograph of sample E, as recorded along the  zone axis, showing a continuous layer, identified as polycrystalline cubic TiN, in contact with the N-polar GaN layer.
HAADF STEM images of samples A (a), B (b), and E (c) showing TiN layer thickness differences after annealing at different temperatures.
Bright field TEM (a) and HAADF STEM (b), image of sample C, showing that the top GaN layer has all transformed into polycrystalline material. There is some island structure above the AlGaN layer, as indicated by white arrow.
(Color online) EDX elemental mapping close to the contact/heterostructure interface area of sample C.
(Color online) HAADF STEM images of sample Dlow (a), (c) and sample Dhigh (b), (d).
Annealing conditions (AT), microstructure, and contact performance of samples A–E.
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