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Microstructure of Ti/Al/Ni/Au ohmic contacts for N-polar GaN/AlGaN high electron mobility transistor devices
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10.1116/1.4829878
/content/avs/journal/jvstb/32/1/10.1116/1.4829878
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/32/1/10.1116/1.4829878

Figures

Image of FIG. 1.
FIG. 1.

(Color online) HAADF STEM images of samples A (a), B (b), and E (c), showing contact morphology differences after annealing at different temperatures.

Image of FIG. 2.
FIG. 2.

(Color online) EDX line profile across the contact metal of sample E showing metal intermixing.

Image of FIG. 3.
FIG. 3.

High-resolution cross-section electron micrograph of sample E, as recorded along the [110] zone axis, showing a continuous layer, identified as polycrystalline cubic TiN, in contact with the N-polar GaN layer.

Image of FIG. 4.
FIG. 4.

HAADF STEM images of samples A (a), B (b), and E (c) showing TiN layer thickness differences after annealing at different temperatures.

Image of FIG. 5.
FIG. 5.

Bright field TEM (a) and HAADF STEM (b), image of sample C, showing that the top GaN layer has all transformed into polycrystalline material. There is some island structure above the AlGaN layer, as indicated by white arrow.

Image of FIG. 6.
FIG. 6.

(Color online) EDX elemental mapping close to the contact/heterostructure interface area of sample C.

Image of FIG. 7.
FIG. 7.

(Color online) HAADF STEM images of sample D (a), (c) and sample D (b), (d).

Tables

Generic image for table
TABLE I.

Annealing conditions (AT), microstructure, and contact performance of samples A–E.

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/content/avs/journal/jvstb/32/1/10.1116/1.4829878
2013-11-11
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Microstructure of Ti/Al/Ni/Au ohmic contacts for N-polar GaN/AlGaN high electron mobility transistor devices
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/32/1/10.1116/1.4829878
10.1116/1.4829878
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