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Closed-cycle cooling of cryopanels in molecular beam epitaxy
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10.1116/1.4862088
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    Affiliations:
    1 Department of Physics and Astronomy, University of British Columbia, Vancouver, British Columbia, V6T 1Z1, Canada and Department of Electrical and Computer Engineering, University of Victoria, Victoria, British Columbia, V8W 2Y2, Canada
    2 Department of Electrical and Computer Engineering, University of Victoria, Victoria, British Columbia, V8W 2Y2, Canada
    3 Department of Electrical and Computer Engineering, University of British Columbia, Vancouver, British Columbia, V6T 1Z4, Canada and Department of Electrical and Computer Engineering, University of Victoria, Victoria, British Columbia, V8W 2Y2, Canada
    a) Electronic mail: rblewis@physics.ubc.ca
    J. Vac. Sci. Technol. B 32, 02C102 (2014); http://dx.doi.org/10.1116/1.4862088
/content/avs/journal/jvstb/32/2/10.1116/1.4862088
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/32/2/10.1116/1.4862088
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Plot illustrating an idealized distribution of HO desorption energies for a cooled metal surface. Nonpumping, pumping, and filled sites are indicated. The filled sites result from the surface being in a steady state with the background HO partial pressure before cooling.

Image of FIG. 2.
FIG. 2.

(Color online) Partial pressures of mass 12, 14, 18, 28, and 44 as a function of time during the cooling of the TSP reservoir (a) to with LN and (b) to with a dry-ice/ethanol slurry. In both cases, the cooling of the reservoir commences at  0. The two dips in the mass 28 u and 14 u signals of (a) are a result of the reservoir being filled in two stages. The shroud was maintained at +70 °C, with the Ga and As cells at operating temperature (Ga at 921 °C and As at 345 °C with the As-cracker at ∼1000 °C). The substrate and all other cells were at 300 °C.

Image of FIG. 3.
FIG. 3.

(Color online) Partial pressures of mass 18, 28, 44, and 75 as a function of time while the shroud is cooled in steps of 20 °C from +20 °C to the lowest achievable temperature of and then warmed back to +20 °C. The steps in the HO partial pressure correspond to changes in the shroud temperature. For these experiments, the TSP reservoir was empty and the Ga and As cells were at operating temperature (Ga at 921 °C and As at 345 °C with the As-cracker at ∼1000 °C). The substrate and all other cells were at 300 °C.

Image of FIG. 4.
FIG. 4.

(Color online) Mass 18 (HO) partial pressure as a function of shroud temperature during cool down over a 2 h period. The initial shroud temperature was between +40 °C and +70 °C.

Image of FIG. 5.
FIG. 5.

(Color online) Room temperature photoluminescence spectra of AlGaAs layers on GaAs grown with closed-cycle cooling of the shroud. The AlGaAs layer is 550 nm thick and the other layers are ∼920 nm thick. Each spectrum shows emission from the AlGaAs layer and the GaAs buffer. The AlGaAs layer growth temperature is indicated for each spectrum. The PL measurement conditions are the same for all the samples.

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/content/avs/journal/jvstb/32/2/10.1116/1.4862088
2014-01-21
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Closed-cycle cooling of cryopanels in molecular beam epitaxy
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/32/2/10.1116/1.4862088
10.1116/1.4862088
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