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Asymmetric resistive switching characteristics of In2O3:SiO2 cosputtered thin film memories
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10.1116/1.4863915
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    Affiliations:
    1 Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
    2 Institute of Creative Industries Research, Fuzhou University, Jimei, Xiamen, Fujian 361024, China
    3 Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
    a) Electronic mail: artde.lam@gmail.com
    b) Electronic mail: changsj@mail.ncku.edu.tw
    J. Vac. Sci. Technol. B 32, 020603 (2014); http://dx.doi.org/10.1116/1.4863915
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/content/avs/journal/jvstb/32/2/10.1116/1.4863915
2014-02-03
2014-09-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Asymmetric resistive switching characteristics of In2O3:SiO2 cosputtered thin film memories
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/32/2/10.1116/1.4863915
10.1116/1.4863915
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