1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Asymmetric resistive switching characteristics of In2O3:SiO2 cosputtered thin film memories
Rent:
Rent this article for
USD
10.1116/1.4863915
/content/avs/journal/jvstb/32/2/10.1116/1.4863915
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/32/2/10.1116/1.4863915
/content/avs/journal/jvstb/32/2/10.1116/1.4863915
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/avs/journal/jvstb/32/2/10.1116/1.4863915
2014-02-03
2014-10-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Asymmetric resistive switching characteristics of In2O3:SiO2 cosputtered thin film memories
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/32/2/10.1116/1.4863915
10.1116/1.4863915
SEARCH_EXPAND_ITEM