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Spurious dangling bond formation during atomically precise hydrogen depassivation lithography on Si(100): The role of liberated hydrogen
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10.1116/1.4864302
/content/avs/journal/jvstb/32/2/10.1116/1.4864302
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/32/2/10.1116/1.4864302
/content/avs/journal/jvstb/32/2/10.1116/1.4864302
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/content/avs/journal/jvstb/32/2/10.1116/1.4864302
2014-02-10
2014-07-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spurious dangling bond formation during atomically precise hydrogen depassivation lithography on Si(100): The role of liberated hydrogen
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/32/2/10.1116/1.4864302
10.1116/1.4864302
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