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Effect of process temperature on the structural and electrical properties of atomic layer deposited ZrO2 films using tris(dimethylamino) cyclopentadienyl zirconium precursor
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10.1116/1.4825109
/content/avs/journal/jvstb/32/3/10.1116/1.4825109
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/32/3/10.1116/1.4825109
/content/avs/journal/jvstb/32/3/10.1116/1.4825109
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/content/avs/journal/jvstb/32/3/10.1116/1.4825109
2013-10-11
2014-12-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of process temperature on the structural and electrical properties of atomic layer deposited ZrO2 films using tris(dimethylamino) cyclopentadienyl zirconium precursor
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/32/3/10.1116/1.4825109
10.1116/1.4825109
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