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Effect of substrate bias and oxygen partial pressure on properties of RF magnetron sputtered HfO2 thin films
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10.1116/1.4825234
/content/avs/journal/jvstb/32/3/10.1116/1.4825234
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/32/3/10.1116/1.4825234
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) GIXRD spectrum of HfO films deposited without substrate bias and at various oxygen partial pressure (in percentage) used during deposition. (b) GIXRD spectrum of HfO films deposited with pulsed d.c. substrate bias and at various oxygen partial pressure (in percentage) used during deposition.

Image of FIG. 2.
FIG. 2.

(a) RBS spectrum (number of scattered α particles as a function of energy of α particles) of a representative HfO sample, which is deposited without substrate bias and at 9.1% oxygen partial pressure in the chamber during deposition. (b) Variation of atom number density of HfO films, estimated from RBS spectra, as a function of oxygen partial pressure (in percentage) used during deposition.

Image of FIG. 3.
FIG. 3.

(a) Grazing incidence x-ray reflectivity spectra of HfO samples deposited with substrate bias and at various oxygen partial pressure (in percentage) used during deposition. (b) Variation of density estimated from GIXR spectra as a function of oxygen partial pressure (in percentage) used during deposition for HfO films deposited with substrate bias.

Image of FIG. 4.
FIG. 4.

(a) Normal incidence transmission spectrum in UV-Vis-NIR range of a representative HfO sample, which is deposited without substrate bias and at zero oxygen partial pressure. (b) Variation of deposition rates of HfO films, obtained from transmittance measurements, as a function of oxygen partial pressure (in percentage) used during deposition. (c) Variation of refractive index of HfO films at 550 nm, obtained from transmittance measurements, as a function of oxygen partial pressure (in percentage) used during deposition. (d) Variation of band gap of HfO films, obtained from transmittance measurements, as a function of oxygen partial pressure (in percentage) used during deposition.

Image of FIG. 5.
FIG. 5.

(a) Experimental and vs wavelength along with best-fit theoretical curves for a representative HfO film deposited without substrate bias and at 23.1% oxygen partial pressure. oooo: Experimental Data; ———: Theoretical fit. (b) Experimental and vs wavelength along with best-fit theoretical curves for a representative HfO film deposited with substrate bias and at 23.1% oxygen partial pressure. oooo: Experimental Data; ———: Theoretical fit.

Image of FIG. 6.
FIG. 6.

Sample structure and the fitting parameters of used TL model along with the dispersion of refractive index for a representative HfO thin film deposited with substrate bias and at 23.1% oxygen partial pressure.

Image of FIG. 7.
FIG. 7.

(a) Variation of void percentage present in the bulk layers of the HfO films, as obtained from spectroscopic ellipsometry measurements, as a function of oxygen partial pressure (in percentage) used during deposition. (b) Variation of refractive index of HfO at 550 nm as obtained from spectroscopic ellipsometry measurements, as a function of oxygen partial pressure (in percentage) used during deposition.

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/content/avs/journal/jvstb/32/3/10.1116/1.4825234
2013-10-23
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of substrate bias and oxygen partial pressure on properties of RF magnetron sputtered HfO2 thin films
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/32/3/10.1116/1.4825234
10.1116/1.4825234
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