(Color online) XRD measurements for ∼12 nm ALD Ce-HFO2 films as-deposited and after the 850 °C/spike and 500 °C/30 min anneals; a HfO2 850 °C-annealed trace is included for comparison. The traces' backgrounds are removed for clarity and one trace has the Si peak removed (asterisked).
MEIS energy spectra for ∼2 nm thick Ce-HfO2 film specimen as-deposited; inset demonstrates Ce:Hf compositional comparison.
(Color online) MEIS Hf depth profiles for ALD Ce-HfO2 films of three different thicknesses.
(Color online) CV plots of ∼6 nm Ce-HfO2 samples after RTA before (a) and after (b) FGA.
(Color online) High-frequency CV plots of ∼6 nm ALD Ce-HfO2 samples as-deposited and after the 850 °C RTA and 500 °C, 30 min N2 anneal; before (a) and after (b) FGA.
(Color online) Current density–voltage characteristics of ∼6 nm ALD Ce-HfO2 samples as-deposited and after the 850 °C RTA and 500 °C, 30 min N2 anneals.
Thermal ALD parameters for three precursors used in deposition of Ce-HfO2 films.
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