1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Physical and electrical characterization of Ce-HfO2 thin films deposited by thermal atomic layer deposition
Rent:
Rent this article for
USD
10.1116/1.4826174
/content/avs/journal/jvstb/32/3/10.1116/1.4826174
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/32/3/10.1116/1.4826174

Figures

Image of FIG. 1.
FIG. 1.

(Color online) XRD measurements for ∼12 nm ALD Ce-HFO films as-deposited and after the 850 °C/spike and 500 °C/30 min anneals; a HfO 850 °C-annealed trace is included for comparison. The traces' backgrounds are removed for clarity and one trace has the Si peak removed (asterisked).

Image of FIG. 2.
FIG. 2.

MEIS energy spectra for ∼2 nm thick Ce-HfO film specimen as-deposited; inset demonstrates Ce:Hf compositional comparison.

Image of FIG. 3.
FIG. 3.

(Color online) MEIS Hf depth profiles for ALD Ce-HfO films of three different thicknesses.

Image of FIG. 4.
FIG. 4.

(Color online) CV plots of ∼6 nm Ce-HfO samples after RTA before (a) and after (b) FGA.

Image of FIG. 5.
FIG. 5.

(Color online) High-frequency CV plots of ∼6 nm ALD Ce-HfO samples as-deposited and after the 850 °C RTA and 500 °C, 30 min N anneal; before (a) and after (b) FGA.

Image of FIG. 6.
FIG. 6.

(Color online) Current density–voltage characteristics of ∼6 nm ALD Ce-HfO samples as-deposited and after the 850 °C RTA and 500 °C, 30 min N anneals.

Tables

Generic image for table
TABLE I.

Thermal ALD parameters for three precursors used in deposition of Ce-HfO films.

Loading

Article metrics loading...

/content/avs/journal/jvstb/32/3/10.1116/1.4826174
2013-10-21
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Physical and electrical characterization of Ce-HfO2 thin films deposited by thermal atomic layer deposition
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/32/3/10.1116/1.4826174
10.1116/1.4826174
SEARCH_EXPAND_ITEM