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Highly separated hybrid orientation structure of CeO2(100) and (110) on Si(100) substrates by electron beam-induced orientation-selective epitaxy
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10.1116/1.4863301
/content/avs/journal/jvstb/32/3/10.1116/1.4863301
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/32/3/10.1116/1.4863301

Figures

Image of FIG. 1.
FIG. 1.

XRD scans taken from the (a) electron beam-irradiated area and the (b) nonirradiated area.

Image of FIG. 2.
FIG. 2.

Orientation profiles, showing the intensities of the (200) and (220) peaks as a function of position for Si substrates with a resistivity of (a) 0.01 and (b) . The hatched bands indicate the transition regions.

Image of FIG. 3.
FIG. 3.

Transition region width as a function of the logarithm of the Si substrate resistivity.

Image of FIG. 4.
FIG. 4.

Illustration of hybrid orientation OSE growth on a SOI substrate with a lithographically formed trench. (Top) A physical schematic of the samples and (bottom) the corresponding surface potential distribution schematic.

Image of FIG. 5.
FIG. 5.

Orientation profiles of hybrid OSE samples grown on the (a) SOI-A substrate and (b) SOI-B substrate with lithographically formed trenches. Hatched bands indicate the position of trenches.

Tables

Generic image for table
TABLE I.

SOI substrates used in this study. and indicate thicknesses of the Si and the buried oxide layers, respectively.

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/content/avs/journal/jvstb/32/3/10.1116/1.4863301
2014-01-29
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Highly separated hybrid orientation structure of CeO2(100) and (110) on Si(100) substrates by electron beam-induced orientation-selective epitaxy
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/32/3/10.1116/1.4863301
10.1116/1.4863301
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