XRD scans taken from the (a) electron beam-irradiated area and the (b) nonirradiated area.
Orientation profiles, showing the intensities of the (200) and (220) peaks as a function of position for Si substrates with a resistivity of (a) 0.01 and (b) . The hatched bands indicate the transition regions.
Transition region width as a function of the logarithm of the Si substrate resistivity.
Illustration of hybrid orientation OSE growth on a SOI substrate with a lithographically formed trench. (Top) A physical schematic of the samples and (bottom) the corresponding surface potential distribution schematic.
Orientation profiles of hybrid OSE samples grown on the (a) SOI-A substrate and (b) SOI-B substrate with lithographically formed trenches. Hatched bands indicate the position of trenches.
SOI substrates used in this study. t Si and t BOX indicate thicknesses of the Si and the buried oxide layers, respectively.
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