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Electrical properties of anatase TiO2 films by atomic layer deposition and low annealing temperature
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10.1116/1.4869059
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    Affiliations:
    1 MANA Foundry and Nano-Electronics Materials Unit, International Center for Materials Nanoarchitectonics, National Institute for Materials Science (WPI-MANA), 1-1 Namiki, Tsukuba 305-0044, Japan and CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 322-0012, Japan
    2 MANA Foundry, International Center for Materials Nanoarchitectonics, National Institute for Materials Science (WPI-MANA), 1-1 Namiki, Tsukuba 305-0044, Japan
    3 Nano-Electronics Materials Unit, International Center for Materials Nanoarchitectonics, National Institute for Materials Science (WPI-MANA), 1-1 Namiki, Tsukuba 305-0044, Japan
    4 Shibaura Institute of Technology, 3-7-5 Toyosu, Koto-ku, Tokyo 135-8548, Japan
    a) Electronic mail: NABATAME.Toshihide@nims.go.jp
    J. Vac. Sci. Technol. B 32, 03D121 (2014); http://dx.doi.org/10.1116/1.4869059
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2014-03-20
2014-09-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical properties of anatase TiO2 films by atomic layer deposition and low annealing temperature
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/32/3/10.1116/1.4869059
10.1116/1.4869059
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