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Engineering crystallinity of atomic layer deposited gate stacks containing ultrathin HfO2 and a Ti-based metal gate: Effects of postmetal gate anneal and integration schemes
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10.1116/1.4869162
/content/avs/journal/jvstb/32/3/10.1116/1.4869162
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/32/3/10.1116/1.4869162
/content/avs/journal/jvstb/32/3/10.1116/1.4869162
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/content/avs/journal/jvstb/32/3/10.1116/1.4869162
2014-03-21
2014-09-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Engineering crystallinity of atomic layer deposited gate stacks containing ultrathin HfO2 and a Ti-based metal gate: Effects of postmetal gate anneal and integration schemes
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/32/3/10.1116/1.4869162
10.1116/1.4869162
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