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Injection of 2D electron gas into a quantum-dot organic light-emitting diode structure on silicon substrate
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The authors report a quantum-dot (QD)
organic light-emitting diode
(OLED) structure formed on Si substrate. Here, the junction area is defined by a lithographically patterned oxide layer on Si substrate and is designed to allow a wide range of scalability of lateral dimension down to a nanometer range. The device structure comprises: (from the top) indium-tin-oxide (70-nm thickness) as a hole-injecting transparent anode, Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (30 nm) as a hole-transport layer, Poly(N-vinylcarbazole) (20 nm) as a hole-transport/electron-blocking layer, CdSe/ZnS core–shell quantum-dots as an emissive layer, and n-Si substrate as an electron-injecting cathode. The authors observed a carrier injection mechanism originating from the two-dimensional electron gas
(2DEG) system available at the SiO2/Si interface. By varying the junction dimensions and geometry, the electron injection process is found to occur predominantly at the junction's periphery, not area, resulting in a low turn-on voltage (∼1–2 V). This 2DEG injection produces one-dimensional emission of light along junction edges. This edge injection/emission QD-OLED structure, when scaled down to a sub-10 nm range, offers an interesting approach to developing single quantum-dot light sources for quantum information processing.
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