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Maskless ion beam writing of precise doping patterns with Be and Si for molecular beam epitaxially grown multilayer GaAs
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10.1116/1.583435
/content/avs/journal/jvstb/4/1/10.1116/1.583435
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/4/1/10.1116/1.583435
/content/avs/journal/jvstb/4/1/10.1116/1.583435
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/content/avs/journal/jvstb/4/1/10.1116/1.583435
1986-01-01
2014-10-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Maskless ion beam writing of precise doping patterns with Be and Si for molecular beam epitaxially grown multilayer GaAs
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/4/1/10.1116/1.583435
10.1116/1.583435
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