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Examination of fluorocarbon‐based plasmas used in the selective and uniform etching of silicon dioxide by response‐surface methodology: Effects of helium addition
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10.1116/1.584441
/content/avs/journal/jvstb/7/1/10.1116/1.584441
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/7/1/10.1116/1.584441
/content/avs/journal/jvstb/7/1/10.1116/1.584441
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/content/avs/journal/jvstb/7/1/10.1116/1.584441
1989-01-01
2015-01-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Examination of fluorocarbon‐based plasmas used in the selective and uniform etching of silicon dioxide by response‐surface methodology: Effects of helium addition
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/7/1/10.1116/1.584441
10.1116/1.584441
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