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Characterization of GaAs/Al x Ga1−x As selective reactive ion etching in SiCl4/SiF4 plasmas
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10.1116/1.584882
/content/avs/journal/jvstb/8/6/10.1116/1.584882
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/8/6/10.1116/1.584882
/content/avs/journal/jvstb/8/6/10.1116/1.584882
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/content/avs/journal/jvstb/8/6/10.1116/1.584882
1990-11-01
2014-07-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of GaAs/AlxGa1−xAs selective reactive ion etching in SiCl4/SiF4 plasmas
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/8/6/10.1116/1.584882
10.1116/1.584882
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