Volume 33, Issue 4, July 2015
Index of content:
- 42nd Conference on The Physics and Chemistry of Semiconductor Interfaces (42nd PCSI 2015)
33(2015); http://dx.doi.org/10.1116/1.4917496View Description Hide Description
Conductance fluctuations in graphene nanoribbons with a disordered, short-range potential are numerically studied. The authors carry out Fermi energy sweeps at different magnetic fields and magnetic field sweeps at a fixed Fermi energy to examine whether universality and ergodicity hold in graphene. The authors find that there is no universality of the fluctuations. The amplitude of fluctuations has a dependence on disorder strength. Further, Fermi energy sweeps have stronger fluctuation amplitudes than magnetic field sweeps, demonstrating a lack of ergodicity. In addition, the magnetic field does not significantly affect the fluctuation amplitude of Fermi energy sweeps.
Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment33(2015); http://dx.doi.org/10.1116/1.4917548View Description Hide Description
In this report, the authors investigate the use of H2/Ar-plasma exposure as a means for achieving high-quality electrical interfaces between p-type GaSb and atomic-layer-deposited Al2O3 dielectric films. Dry in-situ plasma treatments are shown to reduce the estimated density of interface states by over two orders of magnitude compared to a standard wet HCl-treatment, without increasing gate leakage. The chemical compositions of the natively oxidized and treated GaSb surfaces are analyzed via x-ray photoemission spectroscopy (XPS). XPS spectra indicate that the native GaSb oxide is segregated, with Sb-oxide compounds localized at the air interface. Effective H2/Ar-plasma treatments act to remove the Sb-oxide, resulting in a surface Ga-oxide layer enriched in Ga2O3.