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1.Amkor Technology Korea, “ Evaluation for UV laser dicing process and its reliability for various designs of stack chip scale package,” in 59th Electronic Components and Technology Conference, ECTC 2009, San Diego, 2009.
2. A. Hooper , D. Barsic , and J. O'Brien , “ Laser scribing of copper/low-k dielectric semiconductor materials by nanosecond and ultrafast pulsewidth lasers,” in IMAPS—International Microelectroncis assembly and packaging society, Scottsdale, 2009.
3. S.-H. Chae , J.-H. Zhao , D. R. Edwards , and P. S. Ho , “ Effect of dicing technique on the fracture strength of Si dies with emphasis on multimodal failure distribution,” IEEE Trans. Device Mater. Reliab. 10(1), 149156 (2010).
4. O. Haupt , S. A. Frank , K. R. Richter , and A. Ostendorf , “ Laser dicing of silicon: Comparison of ablation mechanisms with a novel technology of thermally induced stress,” J. Laser Micro/Nanoeng. 3(3), 135140 (2008).
5. J. Lopez , A. Lidolff , M. Delaigue , C. Hönninger , S. Ricaud , and E. Mottay , “ Ultrafast laser with high energy and high average power for industrial micromachining: Comparison ps-fs,” in International Congress on Applications of Laser and Opto-Electronics, Tokyo, Japan, 2011, Paper No. 401.
6. A. Boyle , D. Gillen , K. F. G. Dunne , and R. Toftness , “ Increasing die strength by etching during or after dicing,” U.S. patent US20,090,191,690 A1 (11 May 2006).
7. A. Otto , H. Koch , R. Gomez Vazquez , Z. Lin , and B. Hainsey , “ Multiphysical simulation of ns-laser ablation of multi-material LED-structures,” Phys. Procedia 56, 13151324 (2014).
8. A. Otto , H. Koch , K. Leitz , and M. Schmidt , “ Numerical simulations—A versatile approach for better understanding dynamics in laser material processing,” Phys. Procedia 12-A, 1120 (2011).
9. A. Otto , H. Koch , and R. G. Vazquez , “ Multiphysical simulation of laser material processing,” Phys. Procedia 39, 843852 (2012).
10. D. W. Bäuerle , Laser Processing and Chemistry ( Springer-Verlag, Berlin, 2011).
11. E. Coyne , G. M. O'Connor , P. Mannion , J. Magee , and T. Glynn , “ Analysis of thermal damage in bulk silicon with femtosecond laser,” Proc. SPIE 5339, 7383 (2004).
12. H. Pantsar , H. Herfurth , S. Heinemann , P. Laakso , R. Penttila , Y. Liu , and G. Newaz , “ Laser microvia drilling and ablation of silicon using 355 nm pico and nanosecond pulses,” in International Congress on Applications of Laser and Opto-Electronics, 2008, Paper No. M507.
13. M. S. Amer , M. A. El-Ashry , L. R. Dosser , K. E. Hix , J. F. Maguire , and B. Irwin , “ Femtosecond versus nanosecond laser machining: comparison of induced stresses and structural changes in silicon wafers,” Appl. Surf. Sci. 242, 162167 (2004).
14. A. J. Kaspar , S. Luft , M. Nolte , W. Beyer , and E. Beyer , “ Laser helical drilling of silicon wafers with ns to fs pulses: Scanning electron microscopy and transmission electron microscopy characterization of drilled through-holes,” J. Laser Appl. 18(2), 8592 (2006).
15. T. Gross , S. Hening , and D. W. Watt , “ Crack formation during laser cutting of silicon,” J. Appl. Phys. 69, 983989 (1991).
16. A. Luft , U. Franz , A. Emsermann , and J. Kaspar , “ A study of thermal and mechanical effects on materials induced by pulsed laser drilling,” Appl. Phys. A 63, 93101 (1996).
17. A. Hooper and D. Finn , “ Analysis of silicon micromachining by UV lasers, and implications for full cut laser dicing of ultra-thin semiconductor device wafers,” in IMAPS—International Microelectroncis assembly and packaging society, Scottsdale, AZ, 2010.
18. A. Hooper , K. Pettigrew , and M. Knowles , “ Laser processing and integration for Si interposers and 3D packaging applications,” in IMAPS—International Microelectroncis Assembly and Packaging Society, 2012.
19. E. Coyne , G. Mannion , and G. O'Connor , “ A study of femtosecond laser interaction with wafer grade silicon,” Proc. SPIE 4876, 487499 (2003).
20. R. Toftness , A. Bolye , and D. Gillen , “ Laser technology for wafer dicing and microvia drilling for next generation wafers,” Proc. SPIE 5713, 5466 2005.
21. P. Subrahmanyan , “ Laser micromachining in the microelectronics industry: Emerging applications,” Proc. SPIE 4977, 188197 (2003).

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As semiconductor based devices are manufactured on ever thinner silicon substrates, the required associated die break strength has to increase commensurately to maintain pick yields. In this study, the influence of laser processing parameters on the die break strength in laser dicing of silicon oxide-coated silicon wafers and silicon-based memory devices is investigated experimentally using ultraviolet lasers spanning a wide range of pulse width, from 400 fs to 150 ns. It is found that the net fluence, an accumulated pulse energy per surface area, is a meaningful process metric for damage induced by heat-affect zone to compare lasers processes with a large variety of pulse widths, laser scan speed, average powers, and repetition rates. Optimized process conditions for both nanosecond and femtosecond pulse widths are identified for achieving the highest die break strength in the target devices. The dependence of heat-affected zone on pulse width and net fluence during nanosecond laser processing is further demonstrated using multiphysical simulations. Simulations suggest that the thickest heat-affected zone section during laser scribing is typically located at the boundary of the laser incident surface. Simulation results also show that for a given repetition rate the heat-affected zone becomes larger as the net fluence increases due to smaller interpulse separation, consistent with the experimental observation.


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