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Porous silicon with double band photoluminescence fabricated by
chemical-assisted picosecond laser irradiation
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The fabrication of porous silicon with double band photoluminescence(PL) by
chemical-assisted 1064 nm picosecond (ps)laser
irradiation of polysilicon is presented. The hybrid method
includes controlling of the laser scanning interval, number of scans to form
dense micropores, and subsequently, short-time acid corrosion to form
fine nanostructure. Along with the stable red PL visible to the
naked eye, a new violet PL band at 432 nm existed in the fabricated samples. The
double band photoluminescence was mainly attributed to the prepared
micro/nano hierarchical structure. Moreover, dangling bond
defects formed by high-energy photon impinging acted as the catalyzer in the
subsequent acid corrosion resulted in good passivation of the
nanostructure with the formation of Si-H
and Si-O bond, which also contributed to the stable photoluminescence.
The maximum surface porosity of the samples was concluded to be 90.48% which
also bring good hydrophobicity for the prepared samples.
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