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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films -- November 2009
Volume 27, Issue 6, pp. 1255-1399
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Articles
Analysis of controlled mixed-phase (amorphous+microcrystalline) silicon thin films by real time spectroscopic ellipsometry
N. J. Podraza
,
Jing Li
,
C. R. Wronski
,
E. C. Dickey
, and
R. W. Collins
pp. 1255-1259
Abstract
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(435 kB) ]
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Characterizations of Ga-doped ZnO films on Si (111) prepared by atmospheric pressure metal-organic chemical vapor deposition
Yen-Chin Huang
,
Zhen-Yu Li
,
Li-Wei Weng
,
Wu-Yih Uen
,
Shan-Ming Lan
,
Sen-Mao Liao
,
Tai-Yuan Lin
,
Yu-Hsiang Huang
,
Jian-Wen Chen
,
Tsun-Neng Yang
, and
Chin-Chen Chiang
pp. 1260-1265
Abstract
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(533 kB) ]
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Effects of Si capping layers on the properties of ultrathin Co/Ir(111) films
J. S. Tsay
,
Y. C. Liou
,
C. M. Chen
, and
W. Y. Chan
pp. 1266-1270
Abstract
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(181 kB) ]
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Kinetic modeling of the effect of electron beam pulse duration on abatement of carbon tetrafluoride using O
2
as an additive gas
Susumu Kato
,
Isao Okuda
,
Eiichi Takahashi
, and
Yuji Matsumoto
pp. 1271-1274
Abstract
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(243 kB) ]
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Effect of magnetic field strength on deposition rate and energy flux in a dc magnetron sputtering system
Samuel D. Ekpe
,
Francisco J. Jimenez
,
David J. Field
,
Martin J. Davis
, and
Steven K. Dew
pp. 1275-1280
Abstract
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(561 kB) ]
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Time of flight secondary ion mass spectroscopy studies of poly(allyl methacrylate-
g
-dimethylsiloxane) copolymers using cryogenic sample handling techniques: Effects of hydration on surface chemical structure and surface chain length distribution
Daniel J. Hook
,
Lu Chen
,
Paul L. Valint, Jr.
, and
Joseph A. Gardella, Jr.
pp. 1281-1288
Abstract
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(628 kB) ]
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Mechanisms for plasma etching of HfO
2
gate stacks with Si selectivity and photoresist trimming
Juline Shoeb
and
Mark J. Kushner
pp. 1289-1302
Abstract
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(1158 kB) ]
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Development of copper-alloy Matsumoto–Ohtsuka-type vacuum flanges and its application to accelerator beam pipes
Y. Suetsugu
,
M. Shirai
,
M. Ohtsuka
,
T. Nishidono
,
K. Watanabe
,
Y. Suzuki
,
M. Tsuchiya
,
A. Yonemoto
,
K. Sennyu
, and
H. Hara
pp. 1303-1309
Abstract
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(805 kB) ]
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Effects of pulsed sputtering frequency on the uniformity of Al:ZnO's transparent conductive oxide properties for solar cell applications
Wonkyun Yang
and
Junghoon Joo
pp. 1310-1315
Abstract
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(856 kB) ]
Order
Zn-doped CuAlS
2
transparent
p
-type conductive thin films deposited by pulsed plasma deposition
Ming Yang
,
Yinghua Wang
,
Guifeng Li
,
Zhan Shi
, and
Qun Zhang
pp. 1316-1319
Abstract
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(417 kB) ]
Order
Dry-etching properties of TiN for metal/high-
k
gate stack using BCl
3
-based inductively coupled plasma
Dong-Pyo Kim
,
Xue Yang
,
Jong-Chang Woo
,
Doo-Seung Um
, and
Chang-Il Kim
pp. 1320-1325
Abstract
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(337 kB) ]
Order
Modeling of the angular dependence of plasma etching
Wei Guo
and
Herbert H. Sawin
pp. 1326-1336
Abstract
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(745 kB) ]
Order
Ferroelectric polarization dependent interactions at Pd–LiNbO
3
(0001) interfaces
Mosha H. Zhao
,
Dawn A. Bonnell
, and
John M. Vohs
pp. 1337-1342
Abstract
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(496 kB) ]
Order
UV detection based on a ZnO/LiNbO
3
layered surface acoustic wave oscillator circuit
Ching-Liang Wei
,
Ying-Chung Chen
,
Jiun-Lin Fu
,
Kuo-Sheng Kao
,
Da-Long Cheng
, and
Chien-Chuan Cheng
pp. 1343-1346
Abstract
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(568 kB) ]
Order
Synthesis and hydrogen gas sensing properties of ZnO wirelike thin films
Nguyen Le Hung
,
Eunseong Ahn
,
Seongyong Park
,
Hooncheol Jung
,
Hyojin Kim
,
Soon-Ku Hong
,
Dojin Kim
, and
Chanyong Hwang
pp. 1347-1351
Abstract
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(405 kB) ]
Order
Transmission electron microscopy specimen preparation perpendicular to the long axis of high aspect ratio features
R. B. Irwin
,
A. Anciso
,
P. J. Jones
,
A. L. Glenn
,
B. L. Williams
,
S. Sridhar
, and
S. Arshad
pp. 1352-1359
Abstract
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(555 kB) ]
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Structure and properties of ZrN doped diamondlike carbon films prepared by pulsed bias arc ion plating
H. K. Li
,
G. Q. Lin
, and
C. Dong
pp. 1360-1364
Abstract
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(524 kB) ]
Order
Analysis of carbon in SrTiO
3
grown by hybrid molecular beam epitaxy
Bharat Jalan
,
Joël Cagnon
,
Thomas E. Mates
, and
Susanne Stemmer
pp. 1365-1368
Abstract
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(473 kB) ]
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Effects of type of reactor, crystallinity of SiC, and NF
3
gas pressure on etching rate and smoothness of SiC surface using NF
3
gas plasma
A. Tasaka
,
H. Yamada
,
T. Nonoyama
,
T. Kanatani
,
Y. Kotaka
,
T. Tojo
, and
M. Inaba
pp. 1369-1376
Abstract
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(1072 kB) ]
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Simulation of gas flow through tubes of finite length over the whole range of rarefaction for various pressure drop ratios
S. Varoutis
,
D. Valougeorgis
, and
F. Sharipov
pp. 1377-1391
Abstract
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(1906 kB) ]
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Preferential growth of helium-doped Ti films deposited by magnetron sputtering
Lei Zhang
,
L. Q. Shi
,
Z. J. He
,
B. Zhang
, and
L. B. Wang
pp. 1392-1399
Abstract
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