The electronic structure of H/Ge(111)1×1 was investigated using angle-resolved photoelectron spectroscopy. Spectra were measured along the high-symmetry lines of the 1×1 surface Brillouin zone. In the
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direction, two surface states, labeled
a and
a![[prime]](http://scitation.aip.org/stockgif3/prime-script.gif)
, were found in the lower and upper band-gap pockets. The
a and
a![[prime]](http://scitation.aip.org/stockgif3/prime-script.gif)
surface states are associated with the Ge-H bonds and the Ge-Ge backbonds, respectively. In the
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direction, only the Ge-H surface state,
a, can be identified. It is found in the band-gap pocket around the
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point. The two hydrogen-induced surface states on H/Ge(111)1×1 show strong similarities with the corresponding surface states on H/Si(111)1×1. Results from H/Ge(111)1×1 and H/Si(111)1×1 are compared in this Brief Report.