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Fabrication of GaNxAs1–x Quantum Structures by Focused Ion Beam Patterning

AIP Conf. Proc. -- June 30, 2005 -- Volume 772, pp. 223-224
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27; doi:10.1063/1.1994074

Issue Date: 30 June 2005

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K. Alberi,1,2 A. Minor,3 M. A. Scarpulla,1,2 S. J. Chung,1 D. E. Mars,4 K. M. Yu,2 W. Walukiewicz,2 and O. D. Dubon1,2
1Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
2Lawrence Berkeley National Laboratory, Berkeley, CA 94720
3National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
4Agilent Laboratories, Palo Alto, CA 94304
A novel approach to the fabrication of GaNxAs1–x quantum dots and wires via ion beam patterning is presented. Photomodulated reflectance spectra confirm that N can be released from the As sublattice of an MBE-grown GaNxAs1–x film by amorphization through ion implantation followed by regrowth upon rapid thermal annealing (RTA). Amorphization may be achieved with a focused ion beam (FIB), which is used to implant Ga ions in patterned lines such that annealing produces GaAs regions within a GaNxAs1–x film. The profiles of these amorphized lines are dependent upon the dose implanted, and the film reaches a damage threshold during RTA due to excess Ga. By altering the FIB implantation pattern, quantum dots or wires may be fabricated. ©2005 American Institute of Physics
Permalink: http://link.aip.org/link/?APCPCS/772/223/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.16.-c
    Methods of nanofabrication and processing
  • 81.07.Ta
    Quantum dots: fabrication and characterization
  • 81.07.Vb
    Quantum wires: fabrication and characterization
  • YEAR: 2005

PUBLICATION DATA

ISSN:
0094-243X (print)  
Publisher:
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