Quantum Dot Size Tuning And Self-Organization With Pulsed Ion Beam Nucleation And Growth Of Ge/Si Nanostructures
Pulsed low-energy (about 100 eV) ion irradiation during Ge/Si heteroepitaxy was found to stimulate the nucleation of 3D Ge islands. This method provides the smaller average island's size, increasing d...

In Situ Characterization of Ge Nanocrystals Near the Growth Temperature
We present in situ electron diffraction data indicating that Ge nanocrystals embedded in a silica matrix can be solid at temperatures exceeding the bulk Ge melting point. Supercooling is observed when...

AIP Conf. Proc. / Volume 772 / Issue 1

Directed assembly of Ge islands grown on Au-patterned Si(100)

AIP Conf. Proc. -- June 30, 2005 -- Volume 772, pp. 609-610
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27; doi:10.1063/1.1994254

Issue Date: 30 June 2005

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ABSTRACT

J. T. Robinson,^1,2 J. A. Liddle,² A. Minor,² V. Radmilovic,² and O. D. Dubon^1,2
¹Department of Materials and Engineering, University of California, Berkeley, CA 94720
²Lawrence Berkeley National Laboratory, Berkeley, CA 94720

Wehave achieved two-dimensional alignment of Ge islands grown by molecularbeam epitaxy on Au-patterned Si(100). Arrays of Au dots arepatterned by electron-beam evaporation of 1 nm of Au througha stencil mask. For a square array of Au dots,a two-dimensional square lattice consisting of Ge islands less than100 nm in height extending over hundreds of micrometers hasbeen realized. Surprisingly, the Ge islands are square-based, {111}-side- and(100)-top-faceted truncated pyramids and grow at the centers of thesquares formed by the Au-dot arrays. This novel growth processis a versatile method to manipulate island growth kinetics andthereby direct their assembly over large areas. ©2005 American Instituteof Physics

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