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Room temperature spin dependent current modulation in an InGaAs-based spin transistor with ferromagnetic contact

AIP Conf. Proc. -- June 30, 2005 -- Volume 772, pp. 1315-1316
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27; doi:10.1063/1.1994595

Issue Date: 30 June 2005

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Kanji Yoh,1,2 Marhoun Ferhat,2 Alexandru Riposan,3 and Joanna M. Millunchick3
1Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo, 060-8628 Japan
2Japan Science and Technology Agency (JST)
3Materials Science and Engineering Dept., University of Michigan, Ann Arbor, MI 48109
We have observed clear current oscillations when the electrodes were magnetized along the channel current at room temperature. The drain current oscillation dependence on gate voltage agreed with the estimation. We believe that this is the first observation of spin transistor operation. ©2005 American Institute of Physics
Permalink: http://link.aip.org/link/?APCPCS/772/1315/1
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KEYWORDS and PACS

Keywords
PACS
  • 75.50.Pp
    Magnetic semiconductors
  • 75.50.Cc
    Ferromagnetism of nonferrous metals and alloys
  • 72.25.Pn
    Current-driven spin pumping
  • YEAR: 2005

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0094-243X (print)  
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