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Carrier Concentration Dependencies of Magnetization & Transport in Ga1–xMnxAs1–yTey

AIP Conf. Proc. -- June 30, 2005 -- Volume 772, pp. 1367-1368
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27; doi:10.1063/1.1994621

Issue Date: 30 June 2005

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M. A. Scarpulla,1,2 K. M. Yu,2 W. Walukiewicz,2 and O. D. Dubon1,2
1Department of Materials Science & Engineering, University of California Berkeley, Berkeley, CA 94720
2Lawrence Berkeley National Laboratory, Berkeley, CA 94720
We have investigated the transport and magnetization characteristics of Ga1–xMnxAs intentionally compensated with shallow Te donors. Using ion implantation followed by pulsed-laser melting, we vary the Te compensation and drive the system through a metal-insulator transition (MIT). This MIT is associated with enhanced low-temperature magnetization and an evolution from concave to convex temperature-dependent magnetization. ©2005 American Institute of Physics
Permalink: http://link.aip.org/link/?APCPCS/772/1367/1
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KEYWORDS and PACS

Keywords
PACS
  • 72.20.My
    Galvanomagnetic and other magnetotransport effects (semiconductors/insulators)
  • 71.30.+h
    Metal–insulator transitions and other electronic transitions
  • YEAR: 2005

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0094-243X (print)  
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