Programming the Shape of Highly Ordered Ge Islands on Si: from Dots to Rods

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In the Ge on Si model heteroepitaxial system, we show that metal patterns on the Si surface induce the assembly of deposited Ge atoms into highly ordered islands whose shapes are programmed by a combination of metal species and substrate orientation. The island shapes including truncated pyramids and nanorods are radically different from those grown on metal-free surfaces and arise by a process whereby intermixing between deposited Ge and substrate Si atoms from the onset of island formation facilitate the island shape evolution. ©2007 American Institute of Physics