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Magnetic cluster phases of Mn-interstitial-free (Ga,Mn)As

AIP Conf. Proc. -- April 10, 2007 -- Volume 893, pp. 1221-1222
PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006; doi:10.1063/1.2730339

Issue Date: 10 April 2007

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Y. J. Cho,1 M. A. Scarpulla,2 X. Liu,1 Y. Y. Zhou,1 O. D. Dubon,2 and J. K. Furdyna1
1Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556
2Department of Materials Science and Engineering, University of California, Berkeley, California 94720
We report an investigation of magnetic cluster phases of (Ga,Mn)As of varying dosages formed by Mn ion implantation followed by pulsed-laser melting (II-PLM). A systematic study of zero-field-cooled and field-cooled magnetization along several high-symmetry crystallographic directions reveals the presence of magnetic cluster-like phases, and manifests an unambiguous in-plane uniaxial anisotropy in all samples. Since such anisotropy has been previously seen in (Ga,Mn)As grown by molecular beam epitaxy, its observation in (Ga,Mn)As prepared by II-PLM suggests that it is an intrinsic property of (Ga,Mn)As rather than a consequence of a specific growth method. Our results also indicate a unique uniaxial component along [1-bar 10] for the magnetic cluster phase at intermediate Mn dosage indicating that composition as well as processing may determine the details of the magnetic anisotropy in (Ga,Mn)As. ©2007 American Institute of Physics
Permalink: http://link.aip.org/link/?APCPCS/893/1221/1
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KEYWORDS and PACS

Keywords
PACS
  • 75.50.Pp
    Magnetic semiconductors
  • 75.70.Ak
    Magnetic properties of monolayers and thin films
  • 75.60.Ej
    Magnetization curves, hysteresis, Barkhausen and related effects
  • 75.30.Gw
    Magnetic anisotropy
  • YEAR: 2007

PUBLICATION DATA

ISSN:
0094-243X (print)  
Publisher:
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